?2013 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH30T65UPDT rev. c1 FGH30T65UPDT 650 v, 30 a field stop trench igbt november 2013 FGH30T65UPDT 650v, 30a field stop trench igbt features ? maximum junction temperature : t j = 175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) = 1.65 v (typ.) @ i c = 30 a ? 100% of parts tested i lm(2) ? high input impedance ? tightened parameter distribution ? rohs compliant ? short circuit ruggedness > 5 us @ 25 o c general description using novel field stop trench igbt technology, fair childs new series of field stop trench igbts offer the optimum performance for solar inverter , ups and digital power generato r where low conduction and switching losses are essential. applications ? solar inverter, ups, digital power generator absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. j unction temperature 2: i c = 90 a, v cc = 400 v, r g = 20 thermal characteristics symbol description ratings unit v ces collector to emitter voltage 650 v v ges gate to emitter voltage 20 v transient gate to emitter voltage 25 v i c collector current @ t c = 25 o c 60 a collector current @ t c = 100 o c 30 a i cm(1) pulsed collector current 90 a i lm(2) clamped inductive load current 90 a i f diode forward current @ t c = 25 o c 60 a diode forward current @ t c = 100 o c 30 a i fm(1) pulsed diode maximum forward current 150 a p d maximum power dissipation @ t c = 25 o c 250 w maximum power dissipation @ t c = 100 o c 125 w scwt short circuit withstand time @ t c = 25 o c 5 us t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case - 0.60 o c / w r jc (diode) thermal resistance, junction to case - 1.2 o c / w r ja thermal resistance, junction to ambient - 40 o c / w g c e collector (flange) e c g
FGH30T65UPDT 650 v, 30 a field stop trench igbt ?2013 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH30T65UPDT rev. c1 package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted part number top mark package packing method reel size tape width quantity fgh30t65upd_f155 fgh30t65upd to-247 g03 tube n/a n/a 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0 v, i c = 1 ma 650 - - v ? bv ces ? j temperature coefficient of breakdown voltage v ge = 0 v, i c = 250 ua - 0.65 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0 v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0 v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 30 ma, v ce = v ge 4.0 6.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 30 a , v ge = 15 v - 1.65 2.3 v i c = 30 a , v ge = 15 v, t c = 175 o c - 2.1 - v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1 mhz - 2280 - pf c oes output capacitance - 85 - pf c res reverse transfer capacitance - 40 - pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 30 a, r g = 8 , v ge = 15 v, inductive load, t c = 25 o c - 22 - ns t r rise time - 26 - ns t d(off) turn-off delay time - 139 - ns t f fall time - 18 - ns e on turn-on switching loss - 0.76 - mj e off turn-off switching loss - 0.40 - mj e ts total switching loss - 1.16 - mj t d(on) turn-on delay time v cc = 400 v, i c = 30 a, r g = 8 , v ge = 15v, inductive load, t c = 175 o c - 22 - ns t r rise time - 30 - ns t d(off) turn-off delay time - 151 - ns t f fall time - 19 - ns e on turn-on switching loss - 1.20 - mj e off turn-off switching loss - 0.53 - mj e ts total switching loss - 1.73 - mj tsc short circuit withstand time v ge = 15 v, v cc < 400 v, rg = 10 5 - - us q g total gate charge v ce = 400 v, i c = 30 a, v ge = 15 v - 155 - nc q ge gate to emitter charge - 21 - nc q gc gate to collector charge - 91 - nc
FGH30T65UPDT 650 v, 30 a field stop trench igbt ?2013 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH30T65UPDT rev. c1 electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 30 a t c = 25 o c - 2.3 3.0 v t c = 175 o c - 1.9 - e rec reverse recovery energy i f = 30 a, di f /dt = 200 a/ s t c = 175 o c - 35 - uj t rr diode reverse recovery time t c = 25 o c - 33 43 ns t c = 175 o c - 148 q rr diode reverse recovery charge t c = 25 o c - 57 80 nc t c = 175 o c - 560
FGH30T65UPDT 650 v, 30 a field stop trench igbt ?2013 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH30T65UPDT rev. c1 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. saturation voltage vs. case characteristics temperature at variant current leve figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge 0 2 4 6 8 10 0 30 60 90 8 v v ge = 20 v t c = 25 o c 15 v 12 v 10 v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 10 0 30 60 90 8 v v ge = 20 v t c = 175 o c 15 v 12 v 10 v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 5 0 30 60 90 common emitter v ge = 15 v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 30 a 60 a i c = 15 a common emitter v ge = 15 v collector-emitter voltage, v ce [v] case temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 15 a 60 a 30 a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 15 a 60 a 30 a common emitter t c = 175 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGH30T65UPDT 650 v, 30 a field stop trench igbt ?2013 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH30T65UPDT rev. c1 typical performance characteristics figure 7. capacitance characteristic figure 8. gate charge characteri stics figure 9. turn-on characteristics vs. figure 10. turn-off characteristics vs. gate resistance gate resistanc e figure 11. switching loss vs. figure 12. turn-on characteristics vs. gate resistance collector cu rrent 0 40 80 120 160 0 3 6 9 12 15 200 v common emitter t c = 25 o c v cc = 300 v 400 v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 10 100 1000 10000 common emitter v ge = 0 v, f = 1 mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 10 20 30 40 50 10 100 500 switching time [ns] common emitter v cc = 400 v, v ge = 15 v i c = 30 a t c = 25 o c t c = 175 o c t d(on) t r gate resistance, r g [ ? ] 0 10 20 30 40 50 10 100 1000 5000 switching time [ns] common emitter v cc = 400 v, v ge = 15 v i c = 30 a t c = 25 o c t c = 175 o c t d(off) t f gate resistance, r g [ ? ] 0 15 30 45 60 1 10 100 500 common emitter v ge = 15 v, r g = 8 , v cc = 400 v t c = 25 o c , t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 0 10 20 30 40 50 0.1 1 10 30 common emitter v cc = 400 v, v ge = 15 v i c = 30 a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ? ]
FGH30T65UPDT 650 v, 30 a field stop trench igbt ?2013 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH30T65UPDT rev. c1 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. switching loss vs. collector current collector cu rrent figure 15. load current vs. frequency figure 16. soa characteristics figure 17. forward characteristics figure 18. reverse revovery current 0 15 30 45 60 1 10 100 1000 common emitter v ge = 15 v, r g = 8 , v cc = 400 v t c = 25 o c , t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 0 15 30 45 60 0.1 1 10 50 common emitter v ge = 15 v, r g = 8 ? t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 0.1 1 10 100 1000 0.01 0.1 1 10 100 icmax (continuous) icmax (pulsed) 1 ms 10 ms dc operation single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature 10 s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 1k 10k 100k 1m 0 30 60 90 120 150 duty cycle : 50% t c = 100 o c power dissipation = 125 w v cc = 400 v load current : peak of square wave t c = 100 o c collector current, i c a] switching frequency, f [hz] 0 15 30 45 60 0 2 4 6 8 10 t c = 25 o c t c = 175 o c di f /dt = 200 a/ ? s 100 a/ ? s di f /dt = 200 a/ ? s 100 a/ ? s reverse recoverycurrent, i rr [a] forward current, i f [a] 0 1 2 3 4 1 10 100 t c = 175 o c t c = 75 o c t c = 25 o c forward voltage, v f [v] forward current, i f [a]
FGH30T65UPDT 650 v, 30 a field stop trench igbt ?2013 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH30T65UPDT rev. c1 typical performance characteristics figure 19. reverse recovery time figure 20. stored charge fi gure 21. transient thermal impedance of igbt fi gure 22. transient thermal impedance of diode 0 15 30 45 60 0 200 400 600 800 200 a/ ? s 200 a/ ? s di f /dt = 100 a/ ? s di f /dt = 100 a/ ? s t c = 25 o c t c = 175 o c stored recovery charge, q rr [nc] forwad current, i f [a] 0 15 30 45 60 0 40 80 120 160 200 t c = 25 o c t c = 175 o c di f /dt = 100 a/ ? s 200 a/ ? s di f /dt = 100 a/ ? s 200 a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 1e-5 1e-4 1e-3 0.01 0.1 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 1e-5 1e-4 1e-3 0.01 0.1 1 0.01 0.1 1 2 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGH30T65UPDT 650 v, 30 a field stop trench igbt ?2013 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH30T65UPDT rev. c1 mechanical dimensions figure 23. to247, molded, 3-lead, jedec ab long le ad package drawings are provided as a service to custo mers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or dat e on the drawing and contact a fairchild semiconduc tor representative to verify or obtain the most recent revision. package specificat ions do not expand the terms of fairchilds worldwi de terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductors online packa ging area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails .html?id=pn_to247-0a3 dimensions in millimeters
FGH30T65UPDT 650 v, 30 a field stop trench igbt ?2013 fairchild semiconductor corporation 9 www.fairchildsemi.com FGH30T65UPDT rev. c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms accupower? 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